施敏 Simon-Min Sze |
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職稱 | |
榮譽講座教授 | |
學歷 | |
美國史丹佛大學電機工程博士(1963) | |
電子郵件 | |
simonsze@faculty.nctu.edu.tw | |
辦公室 | |
Office Hours | |
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電話 | |
個人網頁 | http://www.ee.nctu.edu.tw/People/Professor/T7914-20091214cf.doc |
實驗室 | 施敏教授實驗室團隊簡介 |
研究領域 | •半導體物理與元件 •積體電路製程技術 |
開授課程 |
2006 ~ 迄今 | National Chiao Tung University Honorary Chair Professor |
2006 ~ 迄今 | Stanford University Consulting Professor |
2004 ~ 迄今 | National Nano-Device Laboratories, Consultant National Science Council |
1999 ~ 2008 | Industrial Technology Research Institute Technical Advisor |
1998 ~ 2004 | National Nano-Device Laboratories, Director National Science Council |
1990 ~ 2006 | National Chiao Tung University Distinguished Professor |
1990 ~ 1996 | Microelectronic and Information Science Director Research Center, National Chiao Tung Univ. |
1984 ~ 1986 | IEEE Electron Device Letters Associate Editor |
1980 ~ 1984 | Solid State Electronics Associate Editor |
1974 ~ 1977 | National Taiwan University Special Chair Professor |
1974 ~ 1977 | Industrial Technology Research Institute Consultant |
1974 ~ 1978 | National Science Council Consultant |
1968 ~ 1969 | National Chiao Tung University C.Y. Tung Chair Professor |
1963 ~ 1989 | Bell Telephone Laboratories Member of Tech. Staff |
[1] | 邂逅數位電子時代影音檔 |
[2] | 邂逅數位電子時代 |
[3] | 如何保護自己的靈魂之窗 |
2007 | Lifetime Achievement Award, Ministry of Economic Affairs, ROC. |
2007 | Distinguished Alumnus of the National Taiwan University |
1998 | Foreign Member, Chinese Academy of Engineering |
1998 | National Science and Technology Prize, ROC. |
1996 | National Endowed Chair Professor Award, Ministry of Education, ROC. |
1995 | Member, US National Academy of Engineering |
1994 | Academician, Academia Sinica |
1991 | IEEE J. J. Ebers Awards |
1977 | Fellow of IEEE |
1972 | Member of Phi Tau Phi Scholastic Honor Society |
1969 | Dr. Sun Yet-Sun Award |
1960 | Member of Sigma Xi Scholastic Honor Society |
[1] | “Diffusion of Zinc and Tin in Indium Antimonide,” with L. Y. Wei, Phys. Rev., 124, 84 (1961). |
[2] | “Photoelectric Determination of the Image Force Dielectric Constant for Hot Electrons in Schottky Barriers,” with C. R. Crowell and D. Kahng, J. Appl. Phys., 35, 2534 (1964). |
[3] | “Avalanche Breakdown Voltages of Abrupt and Linearly Graded p-n Junctions in Ge, Si, GaAs, and GaP,” with G. Gibbons, Appl. Phys. Lett., 8, 111 (1966). |
[4] | “Current Transport in Metal–Semiconductor Barriers,” with C. R. Crowell, Solid State Electron, 9, 1035 (1966). |
[5] | “Current Transport and Maximum Dielectric Strength of Silicon Nitride,” J. Appl. Phys., 38, 2951 (1967). |
[6] | “A Floating Gate and Its Application to Memory Devices,” with D. Kahng, Bell Syst. Tech. J., 46, 1288 (1967). |
[7] | “Schottky Barrier Insulated-Gate Field-Effect Transistors,” with M. P. Lepselter, Proc. IEEE, 56, 1088 (1968). |
[8] | “Carrier Transport and Storage Effects in Au Ion Implanted SiO2 Structure,” with L. I. Chen and K. A. Pickar, Solid State Electron, 15, 979 (1972). |
[9] | “Formation of Ge Nanocrystals Embedded in Silicon-Oxygen-Nitride Layers,” with C. H. Tu et al., Appl. Phys. Lett., 89, 1 (2006). |
[10] | “A Novel Nanowire Channel Poly-Si TFT Functioned as Transistor and Nonvolatile SONOS Memory”, with S. C. Chen et al., IEEE Elec. Dev. Lett., 28, 809 (2007). |
[11] | “Formation of Cobalt-Silicide Nanocrystals in Ge-Doped Dielectric Layer for the Application of Nonvolatile Memory”, with C. W. Hu et al., Appl. Phys. Lett., 92, 152115 (2008). |
[12] | “Improvement of Charge-storage Characteristics of Mo Nanocrystal Memory by Double-layer Structure”, with. C. C. Lin et al., J. Electrochem. Soc., 1, 156 H276 (2009). |
[13] | “NiSiGe Nanocrystals for Nonvolatile Memory Devices”, with C.W. Hu et al., Appl. Phys. Lett., 94(6), 062102 (2009). |
[1] | “Surface Barrier Semiconductor Technology Device”, with C.R.Crowell, US Patents 3349297(1964). |
[2] | “Method of Making Contact Electrodes to Silicon Gate, Source and Drain Regions of a Semiconductor Device”, with M. P. Lepselter, US Patent 4343082 (1980). |
[3] | “Semiconductor-on-Insulator (SOI) Devices and SOI IC Fabrication Method”, with K. K. Ng, US Patent 4763183 (1986). |
[4] | “Light Emitting Diode with High Luminance and Method for Making the Same”, with S. H. Chen, et al., US Patent 64448584 (2000). |
[5] | “Nanocrystal Floating Gate and Method of Manufacturing”, with T. C. Chang, et al., ROC Patent I231531 (2005). |
[6] | “Non-volatile Memory Based on Quantum Dot Storage Cell and Method of Fabrication”, with P. C. Liu, ROC Patent I232582 (2005). |
[7] | “Non-volatile Memory and Method of Manufacturing Floating Gate”, with T. C. Chang, et al., US Patent 7235443 (2006). |
[1] | Physics of Semiconductor Devices, 812 pages, Wiley Interscience, New York, 1969. |
[2] | Semiconductor Devices: Physics and Technology, 2nd Ed., 564 pages, Wiley, New York, 2002. |
[3] | Physics of Semiconductor Devices, 3rd Ed., with K.K.Ng, 815 pages, Wiley Interscience, Hoboken, 2007. |
[4] | VLSI Technology, 2nd Ed., 672 pages, McGraw Hill, New York, 1988. |
[5] | Semiconductor Sensors, 550 pages, Wiley Interscience, New York, 1994. |
[6] | ULSI Devices, with C.Y. Chang, 729 pages, Wiley Interscience, New York, 2000. |
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